Innovative oxide structures
| German title: | Innovative Oxidaufbauten | |
| Acronym: | InOxA | |
| Duration: | 1st April 2023 - 30th September 2025 | |
| Description: | In the InOxA project, an efficient passivation of the interfaces of the silicon is to be developed, which will enable a very high signal-to-noise ratio of silicon-based semiconductor sensors by reducing recombination and noise sources at the interfaces. The special feature of the passivation is that it simultaneously serves as a contact by growing a tunnel oxide and highly doped polysilicon on the silicon. | |
| Funded by: | Federal Ministry of Economic Affairs and Climate Action |  |
| Project sponsor: | Euronorm | |
| Funding code: | 49VF220049 | |
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