Active Edges for Silicon Sensors
| German title: | Active Edges für Silizium-Sensoren | |
| Acronym: | Active Edges | |
| Duration: | 1st July 2014 - 31st December 2016 | |
| Description: | In this project, silicon detectors were developed whose inactive edge area can be reduced to a minimum by doping the side edges. Such so-called active edge sensors were successfully produced, tested and evaluated with two substrate thicknesses, two substrate dopings and three different doping variants. The functionality of the sensors for widths of the inactive sensor edge of up to 30µm were demonstrated. | |
| Markets: | Großprojekte der Hochenergie- und Schwerionenphysik, Medical Technology | |
| Partners: | TU Dortmund, LAL, Orsay, MPI für Physik, München |
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| Funded by: | BMWI |  |
| Project sponsor: | EuroNorm GmbH | |
| Funding code: | MF140051 | |
| Contact: | Contact us about this project via our former business unit Silicon Detectors | |
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