The aim of the recently launched SiCher research project is to develop industry-oriented functional models of SiC detectors for measuring high-energy radiation, in particular UV and X-ray photons as well as electrons. Specific application examples for such components include process monitoring during disinfection using intensive UV radiation, the inspection of systems for X-ray radiotherapy and use as detectors in electron microscopes. The choice of silicon carbide (SiC) as the base material is largely due to its high radiation hardness, which promises extremely low degradation of the sensor elements, even under high radiation exposure. Compared to silicon-based detectors, the high calibration effort is thus significantly reduced and much longer lifetimes can be achieved – even with higher radiation energy. In addition, SiC detectors can be used over a wide temperature range (up to at least 230 °C) with low dark currents due to the low intrinsic charge carrier density at room temperature. This means that there is no need for complex cooling, which reduces the energy and space requirements of the sensor elements. The focus of the development work is not only on the detectors themselves, but also on the assembly and connection technology. Commonly used organic-based adhesives would quickly age or be destroyed under the influence of ionizing radiation. In order to avoid premature sensor failures, the SiC detectors are to be constructed without any organic compounds and alternative technologies are to be used.
The research and development work described is funded by the Federal Ministry of Economic Affairs and Climate Action (BMWK) in the research project “SiC detectors for high-energy radiation” (SiCher).
Funding code: 49 MF 230001
