The new DotIR project is investigating the effects of dopant atoms on the electromigration of MoSi2. Electromigration is a current-driven transport process that occurs in a conductor in which metal ions are moved. It is becoming increasingly important as a failure mechanism as newly developed components become ever smaller and current-carrying structures ever thinner. Electromigration has been known for many years, but its causes in a component are strongly influenced by process- and geometry-dependent factors. Intensive investigation of these processes is necessary to ensure that electronic assemblies and therefore devices function reliably.
For other materials, above all aluminum and copper, there are already extensive studies on the influence of different impurity concentrations, which differ greatly in their effect. An understanding of electron migration processes will also influence the ongoing miniaturization of MEMS infrared emitters, which usually consist of platinum layers embedded in a dielectric membrane.
The infrared emitters developed at the CiS Research Institute are based on a resistive heater layer made of MoSi2. The aim of the new research project is to achieve a reduction in electromigration by doping the MoSi2. In addition, it is being investigated whether doping can increase emissivity in the infrared spectral range.
The research and development work described was funded by the Federal Ministry for Economic Affairs and Climate Action (BMWK) in the research project “Doping of MoSi2 resistance heater layers to improve service life by reducing electromigration in infrared emitters” (DotIR).
Funding code: 49MF240024
