Pressure – Page 6

Synthetic diamond coatings in microsystems technology

20. April 2017/in MEMS, Pressure, Quantum

Synthetic diamond coatings can be manufactured on an industrial scale to be CMOS-compatible. The manufacturing and processing costs are comparable to those of other technologies, such as passivation or contacting. In order to implement diamond coatings as passive as well as active functional layers in sensors and to evaluate their industrial applicability, the CiS Research Institute is dedicated to pressure measurement in aggressive working environments and intelligent thermal management in current R&D projects

Silicon strain gauge

7. October 2016/in Force, Measurement, Medical technology, MEMS, Packaging, Pressure

For precision force measurements, the CiS Research Institute has developed miniaturised silicon strain gauges (Si-DMS) with an integrated measuring bridge. The piezoresistive resistors are monolithically integrated in single-crystal silicon (K-factor = 80) and are available as a double strain element and as a full bridge

MEMS design for highly stable and high-precision pressure sensors – CiS Forschungsinstitut für Mikrosensorik cooperates with TU Hamburg-Harburg

17. June 2016/in MEMS, Pressure

Researchers and developers from both institutions are working together on a project to achieve greater reliability in the development and production of application-specific piezoresistive pressure sensors with a multi-physical simulation

European network SMARTER-SI supports companies in manufacturing smart systems

27. April 2016/in Measurement, Medical technology, MEMS, MOEMS, Pressure

The SMARTER-SI project offers a novel manufacturing platform across Europe on which innovative and intelligent sensor components and microsystems can be produced cost-effectively in small and medium quantities. Around 5.3 million euros in funding will flow into the development and testing of this platform until 2018

Semiconductor Complex Measuring Station

29. January 2016/in Measurement, Pressure

Manufacturing technology and sensors are tested and characterized with a high level of metrological effort in order to be able to demonstrate the desired properties with long-term stability. Different measurement methods are required for this purpose. The new semiconductor complex measuring station represents a milestone in the characterization of technologies and sensors

Semiconductor Complex Measuring Station

12. November 2015/in Measurement, Pressure

Manufacturing technology and sensors are tested and characterized with a high level of metrological effort in order to be able to demonstrate the desired properties with long-term stability. Different measurement methods are required for this purpose. The new semiconductor complex measuring station represents a milestone in the characterization of technologies and sensors

Piezoresistive high temperature pressure transducer cores

12. March 2015/in MEMS, Packaging, Pressure

High-precision process measurement technology is facing new challenges with operating temperatures of up to 300°C. Plant and measurement technology producers want to use MEMS-based pressure transducer cores to open up functional extensions and new design spaces.
The CiS Research Institute in Erfurt has now developed the appropriate microsystem technologies for this purpose

Semiconductor Complex Measurement Station

5. November 2014/in Measurement, Pressure

Manufacturing technology and sensors are tested and characterized with a high level of metrological effort in order to be able to demonstrate the desired properties with long-term stability. Different measurement methods are required for this purpose. The new semiconductor complex measuring station represents a milestone in the characterization of technologies and sensors

Piezoresistive high-temperature pressure transducer cores

3. April 2014/in Measurement, MEMS, Packaging, Pressure

The HotDru project is about the development of high-temperature pressure sensor systems suitable for series production with an operating temperature of up to 300°C. The newly developed pressure sensor chips are realised in different versions, all of which are based on the “Silicon on Insulator” (SOI) principle as a basic structure