From 12th-15th November 2024, we will be showcasing a selection of our research and development results. The European semiconductor industry will meet in the halls of Messe München. Interested visitors will find our stand at the joint Thuringian LEG stand C1718 in Hall C1. We look forward to your visit and a stimulating exchange of ideas
Last week, the CiS MOEMS workshop “NDIR sensor technology from component to system” entered its fourth edition and offered its participants a wide range of presentations and discussions on current trends and applications on the topic. The first questions for the fifth edition of the NDIR workshop in 2026 have already been formulated
For the first time, we are presenting our developments at the international inventors’ fair iENA in Nuremberg. With over 500 inventions from 31 countries, the iENA is one of the most important platforms for innovations. We are excited to see how our technologies will be received by the visitors and the jury
The aim of the new DotIR research project is to achieve a reduction in electromigration by doping MoSi2 in order to improve the service life of infrared emitters. In addition, it is being investigated whether doping can increase emissivity in the infrared spectral range
On 25th and 26th September 2024, experts in future technologies in Central Germany will meet in the Sparkassen-Arena Jena. The CiS Research Institute will also be presenting the latest research results from the field of optics and photonics at its booth F4b in hall 2. Dr. Martin Schädel, Business Unit Manager MOEMS, will be available to answer questions about our trade fair highlights
Miniaturized, infrared-sensitive detectors are required for contact-free temperature measurements as well as imaging and spectroscopic applications in the spectral range from 1 to 15 µm. For this purpose, technologies for membrane generation were developed, selected and realized in the completed MyTZe project
From 8th-13th September 8 2024, the international conference series GADEST (Gettering and Defect Engineering in Semiconductor Technology) will take place in Bad Schandau. Together with research partners, the CiS Research Institute will present four papers on defect mechanisms in silicon with different dopants
In the newly launched CNT-IR project, carbon nanotubes and encapsulations are to be used to increase the emission of the IR emitter while maintaining the same electrical output. Such light sources are used in particular for optical gas sensors (NDIR sensors)
For the possible use of ASi-Sii defects as qubits in quantum technology, their precise local generation is an essential prerequisite. At the CiS Research Institute for Microsensor Technology, local light centers in indium-doped silicon have now been generated and detected for the first time by local laser quenching
Konrad-Zuse-Str. 14
99099 Erfurt
Germany
Tel.: +49 361 663 1410
E-Mail: info@cismst.de
